Growth and characterisation of epitaxial graphene for electronic and sensing applications

Overview

The extraordinary properties of graphene, a single sheet of carbon atoms (e.g. monodimensional structure, high conductivity, low-noise characteristics) are expected to be exploited in the next generation of electronic devices and gas sensors. These applications require a perfect control of the growth of graphene layers, and an optimum integration with the processes and materials used in the semiconductor industry.

This project aims at studying the growth of graphene obtained by heating crystalline SiC at high temperature in Ar atrmosphere and ultra high vacuum.

Research activities

Graphene is grown from high Purity SiC wafers by heating at high temperature (1300-1600 ˚C). Research activities will be tailored to the student level (Honours, V-Res, Master) and include:

• setting up infrared furnace
• preparing samples
• following the growth process in the infrared furnace
• setup and following the growth in ultra high vacuum
• analysis of the resulting graphene film by: Raman spectroscopy, atomic force microscopy, scanning tunneling microscopy
• refining the growth process based on the results.

Outcomes

• Determine the parameters for the growth of graphene.
• Obtain high quality graphene layer on SiC for applications in electronics and gas sensing, and as a substrate for the growth of other 2D materials.

Skills and experience

This project is suitable for students in physics, chemistry or engineering.

This project is lab based and will require good laboratory skills and experience in physics and/or chemistry.

Programming skills desirable

Scholarships

You may be eligible to apply for a research scholarship.

Explore our research scholarships

Keywords

• Graphene
• Material science
• Physics
• Epitaxial growth
• Silicon Carbide

Contact

Contact the supervisor for more information.