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2D heterostructures for future electronics

The traditional approach to the miniaturisation of electronic devices is coming to a halt. Experts agree that the Moore’s law prediction of doubling the number of transistors per chip every two years will cease to be fulfilled in 2020, as the heat produced in small structures cannot be cooled down quickly enough.However, by reducing the size of the device, the quantum nature of atoms and solids can be turned into an asset. By exploiting the phenomena occurring at these scales, …

Study level
PhD, Master of Philosophy, Honours
Faculty
Science and Engineering Faculty
School
School of Chemistry and Physics
Research centre(s)
Centre for Materials Science
Centre for Clean Energy Technologies and Practices

Surface engineering for nanoelectronic devices

Ga2O3 is an emerging wide-bandgap semiconducting material that has received enormous attention in recent years. This is due to its potential application in power devices, UV detectors and military applications that are unattainable by conventional semiconductors such as silicon.The operation and performance of these type of electronic devices rely critically on the surface quality and properties of the semiconducting materials. However, the surface atomic structures and electronic structures of Ga2O3 single crystals are not yet fully understood.The principal aim of …

Study level
PhD, Master of Philosophy, Honours
Faculty
Science and Engineering Faculty
School
School of Chemistry and Physics
Research centre(s)
Centre for Materials Science
Centre for Clean Energy Technologies and Practices

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